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| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
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VIEW | Toshiba Semiconductor and Storage | MOSFET N-CH 20V 3A VS-8 | $proddata[$product['id']]['package'] | U-MOSIII | Obsolete | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 330mW (Ta) | N-Channel | Schottky Diode (Isolated) | 20V | 3A (Ta) | 49 mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | 7.5nC @ 5V | 590pF @ 10V | ±12V | 2V, 4.5V | |||
