- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Part Status | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||
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RFQ |
261
In-stock
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Transphorm | MOSFET N-CH 650V 46.5A TO247-3 | Active | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 156W (Tc) | N-Channel | 650V | 46.5A (Tc) | 41 mOhm @ 30A, 8V | 4.8V @ 700µA | 36nC @ 8V | 1500pF @ 400V | ±20V | 8V | |||
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RFQ |
372
In-stock
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Transphorm | MOSFET N-CH 650V 34A TO247-3 | Active | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 119W (Tc) | N-Channel | 650V | 34A (Tc) | 60 mOhm @ 22A, 10V | 4.8V @ 700µA | 24nC @ 10V | 1000pF @ 400V | ±20V | 10V | |||
