Current - Average Rectified (Io) :
Voltage - Forward (Vf) (Max) @ If :
Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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IDW40G65C5XKSA1
Per Unit
$16.69
RFQ
RFQ
2,615
In-stock
Infineon Technologies DIODE SCHOTTKY 650V 40A TO247-3 thinQ!™ Active Tube Through Hole TO-247-3 PG-TO247-3 Silicon Carbide Schottky 40A (DC) 1.7V @ 40A 220µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 1140pF @ 1V, 1MHz
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Per Unit
$12.52
RFQ
RFQ
1,124
In-stock
Infineon Technologies DIODE SCHOTTKY 650V 30A TO247-3 thinQ!™ Active Tube Through Hole TO-247-3 PG-TO247-3 Silicon Carbide Schottky 30A (DC) 1.7V @ 30A 220µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 860pF @ 1V, 1MHz
IDW40G65C5XKSA1
Per Unit
$16.69
RFQ
RFQ
2,615
In-stock
Infineon Technologies DIODE SCHOTTKY 650V 40A TO247-3 thinQ!™ Active Tube Through Hole TO-247-3 PG-TO247-3 Silicon Carbide Schottky 40A (DC) 1.7V @ 40A 220µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 1140pF @ 1V, 1MHz
IDW30G65C5XKSA1
Per Unit
$12.52
RFQ
RFQ
1,124
In-stock
Infineon Technologies DIODE SCHOTTKY 650V 30A TO247-3 thinQ!™ Active Tube Through Hole TO-247-3 PG-TO247-3 Silicon Carbide Schottky 30A (DC) 1.7V @ 30A 220µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 860pF @ 1V, 1MHz