- Manufacture :
-
- ON Semiconductor (4)
- Central Semiconductor Corp (2)
- Comchip Technology (8)
- Cree/Wolfspeed (10)
- Global Power Technologies Group (2)
- Infineon Technologies (54)
- Littelfuse Inc. (4)
- Microsemi Corporation (6)
- Renesas Electronics America (6)
- Rohm Semiconductor (30)
- Toshiba Semiconductor and Storage (36)
- Vishay Semiconductor Diodes Division (20)
- NXP USA Inc. (6)
- Mounting Type :
- Package / Case :
- Supplier Device Package :
-
- 4-LDPAK (2)
- D2PAK (4)
- DPAK (2)
- ITO-220AC (2)
- L-FLAT™ (4x5.5) (34)
- PG-TO220-2 (14)
- PG-TO220-2-1 (6)
- PG-TO220-3 (2)
- PG-TO247-3 (8)
- PG-TO252-3 (4)
- PG-TO263-2 (4)
- PG-VSON-4 (4)
- Sawn on foil (8)
- TO-220-2L (2)
- TO-220AC (18)
- TO-220F (6)
- TO-220F-2FS (2)
- TO-220FM (4)
- TO-220FP (6)
- TO-220FP-2L (2)
- TO-247 (4)
- TO-252-2 (8)
- TO-252-2L (DPAK) (2)
- TO-263AB (24)
- TO-277A (SMPC) (4)
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
-
- 1.7mA @ 650V (2)
- 100µA @ 1200V (4)
- 100µA @ 1300V (4)
- 100µA @ 650V (4)
- 10µA @ 600V (2)
- 125µA @ 650V (2)
- 140µA @ 600V (6)
- 180µA @ 650V (12)
- 1mA @ 30V (8)
- 1mA @ 40V (10)
- 1mA @ 60V (16)
- 1µA @ 360V (2)
- 1µA @ 600V (2)
- 200µA @ 1200V (8)
- 200µA @ 300V (6)
- 200µA @ 600V (20)
- 200µA @ 650V (2)
- 20µA @ 1200V (2)
- 240µA @ 1200V (4)
- 250µA @ 1200V (2)
- 250µA @ 1300V (2)
- 250µA @ 650V (2)
- 27µA @ 1200V (2)
- 27µA @ 600V (4)
- 340µA @ 650V (2)
- 350µA @ 600V (2)
- 400µA @ 650V (2)
- 500µA @ 45V (16)
- 50µA @ 1200V (10)
- 50µA @ 650V (2)
- 62µA @ 1200V (2)
- 800µA @ 45V (4)
- 90µA @ 600V (8)
- 90µA @ 650V (2)
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
-
- 167pF @ 0V, 1MHz (10)
- 290pF @ 1V, 1MHz (10)
- 300pF @ 1V, 1MHz (20)
- 325pF @ 1V, 1MHz (2)
- 345pF @ 10V, 1MHz (16)
- 350pF @ 0V, 1MHz (2)
- 365pF @ 1V, 1MHz (18)
- 420pF @ 10V, 1MHz (10)
- 430pF @ 1V, 1MHz (2)
- 480pF @ 1V, 1MHz (6)
- 500pF @ 1V, 1MHz (6)
- 525pF @ 1V, 1MHz (2)
- 530pF @ 10V, 1MHz (8)
- 550pF @ 1V, 1MHz (4)
- 575pF @ 1V, 100kHz (2)
- 580pF @ 1V, 1MHz (2)
- 600pF @ 0V, 1MHz (4)
- 600pF @ 1V, 1MHz (2)
- 612pF @ 1V, 100kHz (2)
- 635pF @ 1V, 1MHz (2)
- 650pF @ 1V, 1MHz (2)
- 710pF @ 0V, 1MHz (4)
- 780pF @ 0V, 1MHz (4)
- Applied Filters :
188 results
| Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||
|
|
RFQ |
2,474
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 1200V 10A TO247-3 | thinQ!™ | Obsolete | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 240µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 580pF @ 1V, 1MHz | |||
|
|
|
RFQ |
3,157
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 10A VSON-4 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 300pF @ 1V, 1MHz | |||
|
|
|
RFQ |
2,606
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO263-2 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 1.7mA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
|
|
RFQ |
1,755
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
|
|
RFQ |
1,015
In-stock
|
Renesas Electronics America | DIODE GEN PURP 360V 10A LDPAK | - | Active | Tape & Reel (TR) | Surface Mount | SC-83 | 4-LDPAK | Standard | 10A (DC) | 1.7V @ 10A | 1µA @ 360V | 360V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | - | |||
|
|
|
RFQ |
3,381
In-stock
|
Renesas Electronics America | DIODE SCHOTTKY 600V 10A TO220FP | - | Active | Tube | Surface Mount | TO-220-3 Full Pack | TO-220FP | Schottky | 10A (DC) | 1.8V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | - | |||
|
|
RFQ |
1,408
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 400µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
|
|
RFQ |
909
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Bulk | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 340µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
|
|
RFQ |
790
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 10A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 2.1V @ 10A | 90µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 290pF @ 1V, 1MHz | |||
|
|
|
RFQ |
2,337
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 1200V 10A TO220-2 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 240µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 500pF @ 1V, 1MHz | |||
|
|
|
RFQ |
1,434
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 10A TO252-3 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | Silicon Carbide Schottky | 10A (DC) | 2.1V @ 10A | 90µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 290pF @ 1V, 1MHz | |||
|
|
|
RFQ |
3,790
In-stock
|
Infineon Technologies | DIODE SILICON 600V 10A D2PAK | thinQ!™ | Obsolete | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 140µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 480pF @ 1V, 1MHz | |||
|
|
|
RFQ |
1,715
In-stock
|
Infineon Technologies | DIODE SILICON 300V 10A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 200µA @ 300V | 300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 600pF @ 1V, 1MHz | |||
|
|
|
RFQ |
1,945
In-stock
|
Infineon Technologies | DIODE GEN PURP 1.2KV 10A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 10A (DC) | 1.6V @ 10A | 27µA @ 1200V | 1200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | |||
|
|
|
RFQ |
3,244
In-stock
|
Infineon Technologies | DIODE GEN PURP 600V 10A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 10A (DC) | 1.25V @ 10A | 27µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | |||
|
|
|
RFQ |
1,271
In-stock
|
Infineon Technologies | DIODE GEN PURP 600V 10A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 10A (DC) | 1.95V @ 10A | 27µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -40°C ~ 175°C | - | |||
|
|
|
RFQ |
2,181
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 10A TO220-2 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 350µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 350pF @ 0V, 1MHz | |||
|
|
|
RFQ |
2,167
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 300V 10A TO220-3 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-3 | PG-TO220-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 200µA @ 300V | 300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 600pF @ 0V, 1MHz | |||
|
|
|
RFQ |
2,100
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 10A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 140µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 480pF @ 1V, 1MHz | |||
|
|
|
RFQ |
2,363
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
|
|
RFQ |
3,027
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 10A TO252-3 | thinQ!™ | Active | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | Silicon Carbide Schottky | 10A (DC) | 2.1V @ 10A | 90µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 290pF @ 1V, 1MHz | |||
|
|
|
RFQ |
2,409
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 650V 10A TO220FM | - | Active | Tube | Through Hole | TO-220-2 | TO-220FM | Silicon Carbide Schottky | 10A (DC) | 1.55V @ 10A | 200µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 365pF @ 1V, 1MHz | |||
|
|
|
RFQ |
764
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO263-2 | thinQ!™ | Active | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | - | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
|
|
RFQ |
2,889
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 10A VSON-4 | thinQ!™ | Active | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 300pF @ 1V, 1MHz | |||
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|
|
RFQ |
762
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220AC | - | Not For New Designs | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A (DC) | 1.75V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 650pF @ 1V, 1MHz | |||
|
|
|
RFQ |
3,157
In-stock
|
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 45V 10A TO220AC | TMBS® | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Schottky | 10A (DC) | 680mV @ 10A | 500µA @ 45V | 45V | Fast Recovery = 200mA (Io) | - | 200°C (Max) | - | |||
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|
|
RFQ |
765
In-stock
|
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 45V 10A TO277A | Automotive, AEC-Q101, eSMP®, TMBS® | Active | Tape & Reel (TR) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Schottky | 10A (DC) | 570mV @ 10A | 800µA @ 45V | 45V | Fast Recovery = 200mA (Io) | - | -40°C ~ 150°C | - | |||
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|
|
RFQ |
1,493
In-stock
|
NXP USA Inc. | DIODE GEN PURP 1.5KV 10A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Standard | 10A (DC) | 1.35V @ 6.5A | 250µA @ 1300V | 1500V | Fast Recovery = 200mA (Io) | 220ns | 150°C (Max) | - | |||
|
|
|
RFQ |
3,297
In-stock
|
NXP USA Inc. | DIODE GEN PURP 1.5KV 10A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Standard | 10A (DC) | 1.8V @ 20A | 100µA @ 1300V | 1500V | Standard Recovery >500ns, > 200mA (Io) | 600ns | 150°C (Max) | - | |||
|
|
|
RFQ |
1,684
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 600V 10A TO220FM | - | Not For New Designs | Tube | Through Hole | TO-220-2 | TO-220FM | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | 150°C (Max) | 430pF @ 1V, 1MHz | |||
