Picture Mfr Part # Unit Price QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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Per Unit
$195.09
RFQ
RFQ
3,663
In-stock
GeneSiC Semiconductor DIODE SCHOTTKY 650V 4.3A TO276 - Active Tube Surface Mount TO-276AA TO-276 Silicon Carbide Schottky 4.3A (DC) 1.65V @ 5A 5µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 250°C 274pF @ 1V, 1MHz
Default Photo
Per Unit
$182.53
RFQ
RFQ
3,699
In-stock
GeneSiC Semiconductor DIODE SCHOTTKY 650V 1A TO276 - Active Tube Through Hole TO-276AA TO-276 Silicon Carbide Schottky 1A 1.5V @ 1A 5µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 250°C 76pF @ 1V, 1MHz
Default Photo
Per Unit
$214.31
RFQ
RFQ
1,028
In-stock
GeneSiC Semiconductor DIODE SCHOTTKY 650V 14.6A TO276 - Active Tube Surface Mount TO-276AA TO-276 Silicon Carbide Schottky 14.6A (DC) 1.5V @ 15A 5µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 250°C 1107pF @ 1V, 1MHz
1N8033-GA
Per Unit
$195.09
RFQ
RFQ
3,663
In-stock
GeneSiC Semiconductor DIODE SCHOTTKY 650V 4.3A TO276 - Active Tube Surface Mount TO-276AA TO-276 Silicon Carbide Schottky 4.3A (DC) 1.65V @ 5A 5µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 250°C 274pF @ 1V, 1MHz
1N8031-GA
Per Unit
$182.53
RFQ
RFQ
3,699
In-stock
GeneSiC Semiconductor DIODE SCHOTTKY 650V 1A TO276 - Active Tube Through Hole TO-276AA TO-276 Silicon Carbide Schottky 1A 1.5V @ 1A 5µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 250°C 76pF @ 1V, 1MHz
1N8035-GA
Per Unit
$214.31
RFQ
RFQ
1,028
In-stock
GeneSiC Semiconductor DIODE SCHOTTKY 650V 14.6A TO276 - Active Tube Surface Mount TO-276AA TO-276 Silicon Carbide Schottky 14.6A (DC) 1.5V @ 15A 5µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 250°C 1107pF @ 1V, 1MHz