- Series :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
-
- 1.65V @ 2A (2)
- 1.7V @ 10A (2)
- 1.7V @ 12A (2)
- 1.7V @ 16A (2)
- 1.7V @ 20A (2)
- 1.7V @ 30A (2)
- 1.7V @ 3A (2)
- 1.7V @ 4A (2)
- 1.7V @ 6A (2)
- 1.7V @ 8A (2)
- 1.7V @ 9A (2)
- 1.8V @ 10A (2)
- 1.8V @ 20A (2)
- 1.8V @ 5A (2)
- 1.95V @ 16A (2)
- 1.95V @ 8A (2)
- 2.1V @ 10A (2)
- 2.1V @ 12A (2)
- 2.1V @ 8A (2)
- 2.1V @ 9A (2)
- 2.2V @ 20A (2)
- 2.2V @ 30A (2)
- 2.3V @ 3A (2)
- 2.3V @ 4A (2)
- 2.3V @ 5A (2)
- 2.3V @ 6A (2)
- Current - Reverse Leakage @ Vr :
-
- 100µA @ 600V (2)
- 110µA @ 650V (2)
- 123µA @ 1200V (2)
- 140µA @ 650V (2)
- 15µA @ 600V (2)
- 160µA @ 650V (2)
- 180µA @ 650V (2)
- 18µA @ 1200V (2)
- 190µA @ 650V (2)
- 200µA @ 650V (2)
- 210µA @ 650V (2)
- 25µA @ 600V (2)
- 30µA @ 600V (2)
- 33µA @ 1200V (2)
- 40µA @ 1200V (2)
- 40µA @ 650V (6)
- 50µA @ 1200V (2)
- 50µA @ 600V (2)
- 50µA @ 650V (2)
- 62µA @ 1200V (2)
- 70µA @ 600V (2)
- 70µA @ 650V (2)
- 80µA @ 600V (2)
- 90µA @ 600V (2)
- Voltage - DC Reverse (Vr) (Max) :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
-
- 100pF @ 1V, 1MHz (2)
- 1050pF @ 1V, 1MHz (2)
- 110pF @ 1V, 1MHz (2)
- 130pF @ 1V, 1MHz (4)
- 182pF @ 1V, 1MHz (2)
- 190pF @ 1V, 1MHz (2)
- 240pF @ 1V, 1MHz (2)
- 250pF @ 1V, 1MHz (2)
- 270pF @ 1V, 1MHz (2)
- 280pF @ 1V, 1MHz (2)
- 290pF @ 1V, 1MHz (2)
- 300pF @ 1V, 1MHz (2)
- 301pF @ 1V, 1MHz (2)
- 310pF @ 1V, 1MHz (2)
- 360pF @ 1V, 1MHz (2)
- 365pF @ 1V, 1MHz (2)
- 470pF @ 1V, 1MHz (2)
- 525pF @ 1V, 1MHz (2)
- 590pF @ 1V, 1MHz (2)
- 60pF @ 1V, 1MHz (2)
- 730pF @ 1V, 1MHz (2)
- 80pF @ 1V, 1MHz (2)
- Applied Filters :
52 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||
|
RFQ |
3,309
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 9A TO220-2 | thinQ!™ | Active | - | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 9A (DC) | 2.1V @ 9A | 80µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 280pF @ 1V, 1MHz | ||||
|
RFQ |
3,608
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | thinQ!™ | Active | - | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 8A (DC) | 2.1V @ 8A | 70µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 240pF @ 1V, 1MHz | ||||
|
RFQ |
3,210
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220-2 | thinQ!™ | Active | - | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 6A (DC) | 2.3V @ 6A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | ||||
|
RFQ |
1,728
In-stock
|
Infineon Technologies | DIODE GEN PURP 650V 40A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Standard | 40A (DC) | 2.2V @ 20A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 32ns | -40°C ~ 175°C | - | ||||
|
RFQ |
3,560
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 5A TO220-2 | thinQ!™ | Active | - | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 5A (DC) | 2.3V @ 5A | 30µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 110pF @ 1V, 1MHz | ||||
|
RFQ |
3,781
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 12A TO220-2 | thinQ!™ | Active | - | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 12A (DC) | 2.1V @ 12A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 310pF @ 1V, 1MHz | ||||
|
RFQ |
2,696
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 4A TO220-2 | thinQ!™ | Active | - | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 4A (DC) | 2.3V @ 4A | 25µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 80pF @ 1V, 1MHz | ||||
|
RFQ |
1,987
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 10A TO220-2 | thinQ!™ | Active | - | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 10A (DC) | 2.1V @ 10A | 90µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 290pF @ 1V, 1MHz | ||||
|
RFQ |
1,123
In-stock
|
Infineon Technologies | DIODE SCHOTKY 650V 12A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 190µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 360pF @ 1V, 1MHz | ||||
|
RFQ |
1,781
In-stock
|
Infineon Technologies | DIODE SCHOTKY 650V 10A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | ||||
|
RFQ |
3,951
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 9A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 9A (DC) | 1.7V @ 9A | 160µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 270pF @ 1V, 1MHz | ||||
|
RFQ |
2,624
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 8A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 140µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 250pF @ 1V, 1MHz | ||||
|
RFQ |
3,308
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 6A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 6A (DC) | 1.7V @ 6A | 110µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 190pF @ 1V, 1MHz | ||||
|
RFQ |
2,602
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 3A TO220-2 | thinQ!™ | Active | - | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 3A (DC) | 2.3V @ 3A | 15µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 60pF @ 1V, 1MHz | ||||
|
RFQ |
2,412
In-stock
|
Infineon Technologies | DIODE GEN PURP 650V 60A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Standard | 60A (DC) | 2.2V @ 30A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 42ns | -40°C ~ 175°C | - | ||||
|
RFQ |
2,532
In-stock
|
Infineon Technologies | DIODE SCHOTKY 650V 16A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 16A (DC) | 1.7V @ 16A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 470pF @ 1V, 1MHz | ||||
|
RFQ |
3,644
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 3A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 3A (DC) | 1.7V @ 3A | 50µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 100pF @ 1V, 1MHz | ||||
|
RFQ |
1,147
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 1200V 16A TO220-2 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 16A (DC) | 1.95V @ 16A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 730pF @ 1V, 1MHz | ||||
|
RFQ |
1,682
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 1200V 8A TO220-2 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 8A (DC) | 1.95V @ 8A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 365pF @ 1V, 1MHz | ||||
|
RFQ |
2,628
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 1200V 2A TO220-2 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 2A (DC) | 1.65V @ 2A | 18µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 182pF @ 1V, 1MHz | ||||
|
RFQ |
996
In-stock
|
Infineon Technologies | DIODE SCHOTKY 650V 20A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 20A (DC) | 1.7V @ 20A | 210µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 590pF @ 1V, 1MHz | ||||
|
RFQ |
858
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 1.2KV 5A TO220-2 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 5A (DC) | 1.8V @ 5A | 33µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 301pF @ 1V, 1MHz | ||||
|
RFQ |
2,435
In-stock
|
Infineon Technologies | DIODE GEN PURP 650V 60A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Standard | 60A (DC) | 1.7V @ 30A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 64ns | -40°C ~ 175°C | - | ||||
|
RFQ |
1,550
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 4A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 4A (DC) | 1.7V @ 4A | 70µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | ||||
|
RFQ |
3,195
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 1.2KV 56A TO220-2 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 56A (DC) | 1.8V @ 20A | 123µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1050pF @ 1V, 1MHz | ||||
|
RFQ |
711
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 1200V 10A TO220-2 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 62µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 525pF @ 1V, 1MHz | ||||
|
RFQ |
3,309
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 9A TO220-2 | thinQ!™ | Active | - | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 9A (DC) | 2.1V @ 9A | 80µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 280pF @ 1V, 1MHz | ||||
|
RFQ |
3,608
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | thinQ!™ | Active | - | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 8A (DC) | 2.1V @ 8A | 70µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 240pF @ 1V, 1MHz | ||||
|
RFQ |
3,210
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 600V 6A TO220-2 | thinQ!™ | Active | - | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 6A (DC) | 2.3V @ 6A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | ||||
|
RFQ |
1,728
In-stock
|
Infineon Technologies | DIODE GEN PURP 650V 40A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Standard | 40A (DC) | 2.2V @ 20A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 32ns | -40°C ~ 175°C | - |