- Manufacture :
-
- ON Semiconductor (12)
- Comchip Technology (6)
- Cree/Wolfspeed (28)
- GeneSiC Semiconductor (4)
- Global Power Technologies Group (60)
- Infineon Technologies (26)
- IXYS (8)
- IXYS-RF (12)
- Littelfuse Inc. (4)
- Microsemi Corporation (46)
- Powerex Inc. (4)
- Rohm Semiconductor (30)
- STMicroelectronics (32)
- WeEn Semiconductors (2)
- Weidmuller (2)
- Packaging :
- Mounting Type :
- Voltage - Forward (Vf) (Max) @ If :
-
- 1.4V @ 10A (2)
- 1.55V @ 10A (6)
- 1.55V @ 15A (4)
- 1.55V @ 20A (4)
- 1.5V @ 10A (2)
- 1.5V @ 15A (2)
- 1.5V @ 20A (2)
- 1.5V @ 5A (2)
- 1.65V @ 10A (6)
- 1.65V @ 12A (2)
- 1.65V @ 15A (2)
- 1.65V @ 20A (2)
- 1.65V @ 5A (2)
- 1.6V @ 10A (4)
- 1.6V @ 15A (2)
- 1.6V @ 7.5A (2)
- 1.75V @ 10A (12)
- 1.75V @ 15A (2)
- 1.75V @ 20A (2)
- 1.75V @ 4A (2)
- 1.75V @ 5A (2)
- 1.75V @ 6A (4)
- 1.75V @ 8A (6)
- 1.7V @ 10A (20)
- 1.7V @ 12A (4)
- 1.7V @ 15A (8)
- 1.7V @ 16A (2)
- 1.7V @ 20A (12)
- 1.7V @ 24A (2)
- 1.7V @ 30A (10)
- 1.7V @ 3A (2)
- 1.7V @ 45A (4)
- 1.7V @ 5A (2)
- 1.7V @ 60A (4)
- 1.8V @ 100A (4)
- 1.8V @ 10A (22)
- 1.8V @ 15A (4)
- 1.8V @ 16A (2)
- 1.8V @ 20A (14)
- 1.8V @ 30A (12)
- 1.8V @ 40A (10)
- 1.8V @ 50A (14)
- 1.8V @ 5A (18)
- 1.8V @ 60A (10)
- 1.8V @ 8A (8)
- 1.8V @ 90A (2)
- 1.9V @ 5A (2)
- Current - Reverse Leakage @ Vr :
-
- 1.2mA @ 1200V (4)
- 1.2mA @ 600V (4)
- 100µA @ 1200V (16)
- 100µA @ 600V (14)
- 100µA @ 650V (14)
- 10µA @ 1200V (2)
- 120µA @ 1200V (2)
- 124µA @ 1200V (2)
- 150µA @ 1200V (2)
- 150µA @ 600V (2)
- 166µA @ 1200V (2)
- 1800µA @ 600V (2)
- 180µA @ 650V (2)
- 190µA @ 650V (2)
- 1mA @ 1200V (8)
- 1mA @ 600V (4)
- 200µA @ 1200V (40)
- 200µA @ 300V (6)
- 200µA @ 600V (16)
- 200µA @ 650V (6)
- 20µA @ 1200V (4)
- 210µA @ 650V (2)
- 240µA @ 1200V (2)
- 250µA @ 1200V (4)
- 250µA @ 650V (2)
- 300µA @ 1200V (6)
- 300µA @ 600V (6)
- 305µA @ 1200V (2)
- 30µA @ 1200V (4)
- 375µA @ 1200V (2)
- 400µA @ 1200V (8)
- 400µA @ 600V (10)
- 40µA @ 1200V (4)
- 40µA @ 600V (4)
- 40µA @ 650V (2)
- 500µA @ 1200V (4)
- 50µA @ 1200V (4)
- 50µA @ 600V (10)
- 600µA @ 1200V (4)
- 600µA @ 600V (4)
- 60µA @ 1200V (2)
- 60µA @ 650V (8)
- 62µA @ 1200V (2)
- 800µA @ 1200V (6)
- 800µA @ 600V (4)
- 80µA @ 650V (4)
- 83µA @ 1200V (2)
- 90µA @ 1200V (2)
- 95µA @ 650V (2)
- Current - Average Rectified (Io) (per Diode) :
-
- 100A (DC) (4)
- 10A (28)
- 10A (DC) (32)
- 12A (2)
- 12A (DC) (4)
- 15A (4)
- 15A (DC) (14)
- 16.5A (2)
- 16A (2)
- 16A (DC) (2)
- 17A (4)
- 17A (DC) (2)
- 18A (DC) (2)
- 19A (2)
- 20A (18)
- 20A (DC) (10)
- 21.5A (2)
- 22A (4)
- 22A (DC) (2)
- 24.5V (DC) (2)
- 24A (DC) (6)
- 25.9A (DC) (2)
- 25A (4)
- 27A (2)
- 30A (20)
- 30A (DC) (4)
- 31A (2)
- 33A (DC) (4)
- 36A (DC) (4)
- 38A (4)
- 39A (DC) (2)
- 40A (8)
- 43A (2)
- 44A (DC) (2)
- 45A (4)
- 49A (2)
- 4A (2)
- 50A (12)
- 50A (DC) (2)
- 55A (DC) (2)
- 5A (8)
- 60A (12)
- 64A (2)
- 65A (DC) (2)
- 6A (4)
- 8A (4)
- 8A (DC) (6)
- 90A (2)
- 94A (DC) (2)
- 9A (2)
- Operating Temperature - Junction :
- Applied Filters :
276 results
Picture | Mfr Part # | Unit Price | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||
|
RFQ |
1,926
In-stock
|
Global Power Technologies Group | DIODE SCHOTTKY 1200V 30A TO247-3 | Amp+™ | Obsolete | Tube | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 1.7V @ 30A | 100µA @ 1200V | 1 Pair Common Anode | 1200V | 30A | Fast Recovery = 200mA (Io) | - | -55°C ~ 135°C | ||||
|
RFQ |
3,420
In-stock
|
Global Power Technologies Group | DIODE SCHOTTKY 1200V 30A TO247-3 | Amp+™ | Obsolete | Tube | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 1.7V @ 30A | 100µA @ 1200V | 1 Pair Common Anode | 1200V | 30A | Fast Recovery = 200mA (Io) | - | -55°C ~ 135°C | ||||
|
RFQ |
2,628
In-stock
|
Global Power Technologies Group | DIODE SCHOTTKY 600V 24A TO247-3 | Amp+™ | Obsolete | Tube | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 1.7V @ 24A | 100µA @ 600V | 1 Pair Common Anode | 600V | 24A (DC) | Fast Recovery = 200mA (Io) | - | -55°C ~ 135°C | ||||
|
RFQ |
3,160
In-stock
|
Global Power Technologies Group | DIODE SCHOTTKY 1200V 15A TO247-3 | Amp+™ | Obsolete | Tube | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 1.7V @ 15A | 100µA @ 1200V | 1 Pair Common Anode | 1200V | 15A (DC) | Fast Recovery = 200mA (Io) | - | -55°C ~ 135°C | ||||
|
RFQ |
1,576
In-stock
|
Global Power Technologies Group | DIODE SCHOTTKY 600V 12A TO247-3 | Amp+™ | Obsolete | Tube | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 1.7V @ 12A | 100µA @ 600V | 1 Pair Common Anode | 600V | 12A (DC) | Fast Recovery = 200mA (Io) | - | -55°C ~ 135°C | ||||
|
RFQ |
1,963
In-stock
|
Powerex Inc. | DIODE MODULE 1.2KV 100A | - | Active | Bulk | Chassis Mount | Module | Module | Silicon Carbide Schottky | 1.8V @ 100A | 1mA @ 1200V | 2 Independent | 1200V | 100A (DC) | No Recovery Time > 500mA (Io) | 0ns | - | ||||
|
RFQ |
2,182
In-stock
|
Powerex Inc. | DIODE MODULE 1.2KV 100A | - | Active | Bulk | Chassis Mount | Module | Module | Silicon Carbide Schottky | 1.8V @ 100A | 1mA @ 1200V | 2 Independent | 1200V | 100A (DC) | No Recovery Time > 500mA (Io) | 0ns | - | ||||
|
RFQ |
3,854
In-stock
|
WeEn Semiconductors | DIODE ARRAY SCHOTTKY 650V TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 1.7V @ 10A | 250µA @ 650V | 1 Pair Common Cathode | 650V | 20A | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | ||||
|
RFQ |
2,339
In-stock
|
Microsemi Corporation | DIODE MODULE 600V 40A SOT227 | - | Obsolete | Bulk | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Silicon Carbide Schottky | 1.8V @ 40A | 800µA @ 600V | 2 Independent | 600V | 40A | No Recovery Time > 500mA (Io) | 0ns | - | ||||
|
RFQ |
3,098
In-stock
|
Microsemi Corporation | DIODE MODULE 1.2KV 30A SOT227 | - | Obsolete | Bulk | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Silicon Carbide Schottky | 1.8V @ 30A | 600µA @ 1200V | 2 Independent | 1200V | 30A | No Recovery Time > 500mA (Io) | 0ns | - | ||||
|
RFQ |
2,776
In-stock
|
Microsemi Corporation | DIODE MODULE 1.2KV 30A SOT227 | - | Obsolete | Bulk | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Silicon Carbide Schottky | 1.8V @ 30A | 600µA @ 1200V | 2 Independent | 1200V | 30A | No Recovery Time > 500mA (Io) | 0ns | - | ||||
|
RFQ |
1,434
In-stock
|
Microsemi Corporation | DIODE MODULE 600V 90A SP1 | - | Obsolete | Bulk | Chassis Mount | SP1 | SP1 | Silicon Carbide Schottky | 1.8V @ 90A | 1800µA @ 600V | 2 Independent | 600V | 90A | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | ||||
|
RFQ |
757
In-stock
|
Microsemi Corporation | DIODE MODULE 600V 60A ISOTOP | - | Not For New Designs | Bulk | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | Silicon Carbide Schottky | 1.8V @ 60A | 1.2mA @ 600V | 2 Independent | 600V | 60A | No Recovery Time > 500mA (Io) | 0ns | - | ||||
|
RFQ |
2,932
In-stock
|
Microsemi Corporation | DIODE MODULE 600V 60A SOT227 | - | Not For New Designs | Bulk | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Silicon Carbide Schottky | 1.8V @ 60A | 1.2mA @ 600V | 2 Independent | 600V | 60A | No Recovery Time > 500mA (Io) | 0ns | - | ||||
|
RFQ |
3,397
In-stock
|
Microsemi Corporation | DIODE MODULE 600V 20A SOT227 | - | Not For New Designs | Bulk | Chassis Mount | ISOTOP | SOT-227 | Silicon Carbide Schottky | 1.8V @ 20A | 400µA @ 600V | 2 Independent | 600V | 20A | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | ||||
|
RFQ |
3,599
In-stock
|
Microsemi Corporation | DIODE MODULE 600V 50A SOT227 | - | Not For New Designs | Bulk | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Silicon Carbide Schottky | 1.8V @ 50A | 1mA @ 600V | 2 Independent | 600V | 50A | No Recovery Time > 500mA (Io) | 0ns | - | ||||
|
RFQ |
3,967
In-stock
|
Global Power Technologies Group | DIODE ARRAY SCHOTTKY 1200V TO247 | Amp+™ | Active | Tube | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 1.8V @ 10A | 20µA @ 1200V | 1 Pair Common Cathode | 1200V | 33A (DC) | No Recovery Time > 500mA (Io) | - | -55°C ~ 175°C | ||||
|
RFQ |
2,311
In-stock
|
ON Semiconductor | SIC 1200V DIODE | - | Active | - | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | - | - | 1 Pair Common Cathode | 1200V | 10A (DC) | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | ||||
|
RFQ |
2,215
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO247-3 | - | Active | Tube | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | - | - | 1 Pair Common Cathode | 1200V | 10A (DC) | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | ||||
|
RFQ |
2,659
In-stock
|
Comchip Technology | DIODE DUAL SILICON CARBIDE POWER | - | Active | - | Through Hole | TO-247-3 | TO-247 | Silicon Carbide Schottky | 1.7V @ 5A | 100µA @ 1200V | 1 Pair Common Cathode | 1200V | 18A (DC) | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | ||||
|
RFQ |
3,413
In-stock
|
Global Power Technologies Group | DIODE ARRAY SCHOTTKY 650V TO247 | Amp+™ | Active | Tube | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 1.65V @ 10A | 100µA @ 650V | 1 Pair Common Cathode | 650V | 30A (DC) | No Recovery Time > 500mA (Io) | - | -55°C ~ 175°C | ||||
|
RFQ |
3,559
In-stock
|
Global Power Technologies Group | DIODE ARRAY SCHOTTKY 600V TO247 | Amp+™ | Active | Tube | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 1.65V @ 10A | 40µA @ 600V | 1 Pair Common Cathode | 600V | 30A (DC) | No Recovery Time > 500mA (Io) | - | -55°C ~ 175°C | ||||
|
RFQ |
1,056
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 12A TO247D | - | Active | Tube | Through Hole | TO-247-3 | TO-247 | Silicon Carbide Schottky | 1.9V @ 5A | 50µA @ 1200V | 1 Pair Common Cathode | 1200V | 12A | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | ||||
|
RFQ |
3,048
In-stock
|
Comchip Technology | DIODE DUAL SILICON CARBIDE POWER | - | Active | - | Through Hole | TO-247-3 | TO-247 | Silicon Carbide Schottky | 1.7V @ 10A | 100µA @ 650V | 1 Pair Common Cathode | 650V | 33A (DC) | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | ||||
|
RFQ |
3,500
In-stock
|
Global Power Technologies Group | DIODE ARRAY SCHOTTKY 1200V TO247 | Amp+™ | Active | Tube | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 1.8V @ 5A | 10µA @ 1200V | 1 Pair Common Cathode | 1200V | 17A (DC) | No Recovery Time > 500mA (Io) | - | -55°C ~ 175°C | ||||
|
RFQ |
1,835
In-stock
|
STMicroelectronics | DIODE ARRAY SCHOTTKY 650V TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247 | Silicon Carbide Schottky | 1.75V @ 10A | 100µA @ 650V | 1 Pair Common Cathode | 650V | 10A | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | ||||
|
RFQ |
1,372
In-stock
|
STMicroelectronics | DIODE ARRAY SCHOTTKY 650V TO220 | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Silicon Carbide Schottky | 1.75V @ 6A | 60µA @ 650V | 1 Pair Common Cathode | 650V | 6A | Fast Recovery = 200mA (Io) | - | -40°C ~ 175°C | ||||
|
RFQ |
3,175
In-stock
|
Global Power Technologies Group | DIODE ARRAY SCHOTTKY 1200V TO247 | Amp+™ | Active | Tube | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 1.8V @ 8A | 20µA @ 1200V | 1 Pair Common Cathode | 1200V | 24A (DC) | No Recovery Time > 500mA (Io) | - | -55°C ~ 175°C | ||||
|
RFQ |
3,700
In-stock
|
STMicroelectronics | DIODE ARRAY SCHOTTKY 650V TO220 | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB Insulated | Silicon Carbide Schottky | 1.75V @ 10A | 100µA @ 650V | 1 Pair Series Connection | 650V | 10A | No Recovery Time > 500mA (Io) | 0ns | 150°C (Max) | ||||
|
RFQ |
3,565
In-stock
|
Global Power Technologies Group | DIODE ARRAY SCHOTTKY 600V TO247 | Amp+™ | Active | Tube | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 1.65V @ 12A | 40µA @ 600V | 1 Pair Common Cathode | 600V | 36A (DC) | No Recovery Time > 500mA (Io) | - | -55°C ~ 175°C |